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SiC Senior Process Design and Integration Engineer - Job Opportunity at Vishay Intertechnology, Inc.

Newport, United Kingdom
Full-time
Senior
Posted: April 29, 2025
On-site
GBP 90,000 - 120,000 per year based on location and experience level

Benefits

Comprehensive healthcare coverage with global standards
Financial support programs aligned with Fortune 1000 practices
Career development resources and global mobility opportunities
Work-life balance initiatives

Key Responsibilities

Lead design and simulation of advanced SiC Power MOSFET fabrication processes
Direct development of PCM/TEG structures for process monitoring
Define and coordinate unit process specifications with fab team
Conduct electrical characterization of SiC power semiconductor devices
Analyze device parameters and optimize manufacturing yield
Drive process innovation for next-generation power devices

Requirements

Education

PhD or Masters-level degree in semiconductor device/material physics

Experience

10+ years post-graduation in power semiconductor technology

Required Skills

TCAD simulation expertise Power semiconductor device knowledge Project management skills MATLAB/MathCAD proficiency Problem-solving capabilities Communication skills Interpersonal abilities Team leadership
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Sauge AI Market Intelligence

Industry Trends

Silicon Carbide (SiC) technology is experiencing exponential growth in power electronics, particularly driven by EV and renewable energy sectors Wide bandgap semiconductors are becoming crucial for next-generation power devices with improved efficiency and thermal performance Manufacturing process innovation in SiC is critical as the industry scales up production to meet automotive and industrial demand

Role Significance

Likely leading a specialized team of 5-8 engineers while collaborating with cross-functional teams across global locations
Senior technical leadership position with direct impact on next-generation power device development and manufacturing processes

Key Projects

Development of next-generation SiC power MOSFETs Manufacturing process optimization for yield improvement Integration of novel fabrication techniques for wide bandgap semiconductors

Success Factors

Deep technical expertise in SiC and wide bandgap semiconductor physics Ability to bridge theoretical knowledge with practical manufacturing constraints Strong project management skills for complex technology development initiatives Excellence in cross-functional collaboration and technical leadership

Market Demand

Very high demand due to limited talent pool in SiC technology and increasing market adoption of wide bandgap semiconductors

Important Skills

Critical Skills

SiC device physics expertise is essential for developing next-generation power devices Process integration knowledge is crucial for manufacturing optimization TCAD simulation proficiency is vital for device design and optimization

Beneficial Skills

Knowledge of competing wide bandgap technologies (GaN) Automotive qualification experience Patent development experience Industry standards expertise

Unique Aspects

Rare opportunity to work on cutting-edge SiC technology with a global leader
Position combines advanced theoretical knowledge with practical manufacturing implementation
Role offers significant influence on next-generation power device development

Career Growth

2-4 years in role before advancement, depending on project success and organizational growth

Potential Next Roles

Technical Director R&D Manager Chief Technology Officer Global Process Integration Lead

Company Overview

Vishay Intertechnology, Inc.

Vishay is a Fortune 1000 company and global leader in discrete semiconductors and passive electronic components

Strong market position in power semiconductor segment with significant investment in wide bandgap technology
Strategic UK location supporting European semiconductor manufacturing initiatives
Engineering-driven environment with focus on innovation and technical excellence
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